2 nm/cycle. The black squares in Figure 1 show the true thickness as a function of N. Figure 1 Fitting curve according to the function model is shown with a red solid line. To model the true growth process of ALD-ZnO film on TiO2 layer, a method similar to that reported by Banerjee et al. [8] was employed. The decrease of the GPC of ZnO may result from the reduced adsorption of DEZ on TiO2. Thus, it is appropriate to assume that the

GPC of ZnO follows an exponential behavior given by (2) where GPC ′ ZnO represents the GPC of ZnO in TZO film, A is the GPC of pure ZnO film, the independent variable i is the ith cycle number after TiO2 deposition, and the parameter n refers to the number of cycles it needs for GPC ′ ZnO to reach 63.2% of the ideal growth rate GS-1101 cost of ZnO. NSC 683864 solubility dmso According to Equation 2, the GPC ′ ZnO would be close to that observed in pure ZnO films after enough number of ZnO cycles. It is also appropriate to assume that GPC ′ TiO2 remains unchanged throughout the whole process since TiO2 is always

deposited on ZnO. Considering all the assumptions above, the total thickness of the film can be given by (3) where T denotes the total thickness and the constant t is the GPC of TiO2. Using this function model to fit the measured data, the parameter n can be calculated to be approximately 1 while t is approximately 0.024 nm/cycle. Thus, it can be concluded that TiO2 encounters little barrier to grow on ZnO. Figure 2 shows the XRD patterns of as-deposited TZO films on quartz. As is displayed in Figure 2a, the crystallinity

of the films depends on the N. No phases related to TiO2 or Zn2TiO4 are detected in the scanning range. Usually, the [002] Levetiracetam direction, i.e., the c-axis, is the preferential orientation commonly occurring in pure ZnO films and doped ZnO films prepared by other fabrication techniques such as sol–gel, CVD, and sputtering [10]. However, in the current samples, the (100) peak gradually becomes dominant and the (002) peak turns to be weaker as Ti doping concentration increases. The (100) peak reaches a maximum for the sample with N = 5. However, no peak can be observed in the samples with N = 2 and 1, indicating that the TZO films become amorphous with too much Ti doping. It is well known that the (002) plane of ZnO consists of alternate planes of Zn2+ and O2− and thus is charged positively or negatively, depending on surface termination. On the other hand, the (100) plane is a charge neutral surface consisting of alternate rows of Zn2+ and O2− ions on the surface. Thus, it is conceivable that the layer-by-layer growth during ALD may cause the Ti4+ ions to disturb the charge neutrality of the (100) plane, thereby affecting its surface energy and causing its preferential growth [8]. Figure 2 XRD patterns for TZO films deposited on quartz for 2 θ . (a) 20° to 65° and (b) 30° to 40°.